Electronic devices and circuit theory
副标题:无
作 者:(美)Robert L. Boylestad, (美)Louis Nashelsky著;李立华改编
分类号:
ISBN:9787121043963
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简介
Chapter 1 Semiconductor Diodes
1.1 Introduction
1.2 Semiconductor Materials: Ge, Si, and GaAs
1.3 Covalent Bonding and Intrinsic Materials
1.4 Extrinsic Materials: n-Type and p-Type Materials
1.5 Semiconductor Diode
1.6 Ideal Versus Practical
1.7 Resistance Levels
1.8 Diode Equivalent Circuits
1.9 Transition and Diffusion Capacitance
1.10 Reverse Recovery Time
1.11 Diode Specification Sheets
1.12 Semiconductor Diode Notation
1.13 Zener Diodes
1.14 Summary
1.15 Computer Analysis
Problems
Chapter 2 Diode Applications
2.1 Introduction
2.2 Load-Line Analysis
2.3 Equivalent Model Analysis
2.4 AND/OR Gates
2.5 Sinusoidal Inputs; Half-Wave Rectification
2.6 Fu]l-Wave Rectification
2.7 Clippers
2.8 Clampers
2.9 Zener Diodes
2.10 Summary
Problems
Chapter 3 Bipolar Junction Transistors
3.] Introduction
3.2 Transistor Construction
3.3 Transistor Operation
3.4 Common-Base Configuration
3.5 Transistor Amplifying Action
3.6 Common-Emitter Configuration
3.7 Common-Collector Configuration
3.8 Limits of Operation
3.9 Transistor Specification Sheet
3.10 Transistor Casing and Terminal Identification
3.11 Summary
Problems
Chapter4 DC BiasingmBJTs
4.1 Introduction
4.2 Operating Poim
4.3 Fixed-Bias Circuit
4.4 Emitter Bias
4.5 Voltage-Divider Bias
4.6 DC Bias with Voltage Feedback
4.7 Miscellaneous Bias Configurations
4.8 Transistor Switching Networks
4.9 pnp Transistors
4.10 Bias Stabilization
4.11 Summary
Problems
Chapter 5 BJT AC Analysis
5.1 Introduction
5.2 Amplification in the AC Domain
5.3 BJT Transistor Modeling
5.4 The re Transistor Model
5.5 The Hybrid Equivalent Model
5.6 Hybrid ,r Model
5.7 Variations of Transistor Parameters
5.8 Common-Emitter Fixed-Bias Configuration
……
Chapter 6 Field-Effect Transistors
Chapter 7 FET Biasing
Chapter 8 FET Amplifiers
Chapter 9 BJT and JFET Frequency Response
Chapter 10 Operational Amplifiers
Chapter 11 Op-Amp Applications
Chapter 12 Power Amplifiers
Chapter 13 Feedback Circuits
目录
Chapter 1 Semiconductor Diodes
1.1 Introduction
1.2 Semiconductor Materials: Ge, Si, and GaAs
1.3 Covalent Bonding and Intrinsic Materials
1.4 Extrinsic Materials: n-Type andp-Type Materials
1.5 Semiconductor Diode
1.6 Ideal Versus Practical
1.7 Resistance Levels
1.8 Diode Equivalent Circuits
1.9 Transition and Diffusion Capacitance
1.10 Reverse Recovery Time
1.11 Diode Specification Sheets
1.12 Semiconductor Diode Notation
1.13 Zener Diodes
1.14 Summary
1.15 Computer Analysis
Problems
Chapter 2 Diode Aoolications
2.1 Introduction
2.2 Load-Line Analysis
2.3 Equivalent Model Analysis
2.4 AND/OR Gates
2.5 Sinusoidal Inputs: Half-Wave Rectification
2.6 Full-Wave Rectification
2.7 Clippers
2.8 Clampers
2.9 Zener Diodes
2.10 Summary
Problems
Chapter 3 Bipolar Junction Transistors
3.1 Introduction
3.2 Transistor Construction
3.3 Transistor Operation
3.4 Common-Base Configuration
3.5 Transistor Amplifying Action
3.6 Common-Emitter Configuration
3.7 Common-Collector Configuration
3.8 Limits of Operation
3.9 Transistor Specification Sheet
3.10 Transistor Casing and Terminal Identification
3.11 Summary
Problems
Chapter 4 DC Biasing-BJTs
4.1 Introduction
4.2 Operating Point
4.3 Fixed-Bias Circuit
4.4 Emitter Bias
4.5 Voltage-Divider Bias
4.6 DC Bias with Voltage Feedback
4.7 Miscellaneous Bias Configurations
4.8 Transistor Switching Networks
4.9 pnp Transistors
4.10 Bias Stabilization
4.11 Summary
Problems
Chapter 5 BJT AC Analysis
5.1 Introduction
5.2 Amplification in the AC Domain
5.3 BJT Transistor Modeling
5.4 The r Transistor Model
5.5 The Hybrid Equivalent Model
5.6 Hybrid π Model
5.7 Variations of Transistor Parameters
5.8 Common-Emitter Fixed'Bias Configuration
……
1.1 Introduction
1.2 Semiconductor Materials: Ge, Si, and GaAs
1.3 Covalent Bonding and Intrinsic Materials
1.4 Extrinsic Materials: n-Type andp-Type Materials
1.5 Semiconductor Diode
1.6 Ideal Versus Practical
1.7 Resistance Levels
1.8 Diode Equivalent Circuits
1.9 Transition and Diffusion Capacitance
1.10 Reverse Recovery Time
1.11 Diode Specification Sheets
1.12 Semiconductor Diode Notation
1.13 Zener Diodes
1.14 Summary
1.15 Computer Analysis
Problems
Chapter 2 Diode Aoolications
2.1 Introduction
2.2 Load-Line Analysis
2.3 Equivalent Model Analysis
2.4 AND/OR Gates
2.5 Sinusoidal Inputs: Half-Wave Rectification
2.6 Full-Wave Rectification
2.7 Clippers
2.8 Clampers
2.9 Zener Diodes
2.10 Summary
Problems
Chapter 3 Bipolar Junction Transistors
3.1 Introduction
3.2 Transistor Construction
3.3 Transistor Operation
3.4 Common-Base Configuration
3.5 Transistor Amplifying Action
3.6 Common-Emitter Configuration
3.7 Common-Collector Configuration
3.8 Limits of Operation
3.9 Transistor Specification Sheet
3.10 Transistor Casing and Terminal Identification
3.11 Summary
Problems
Chapter 4 DC Biasing-BJTs
4.1 Introduction
4.2 Operating Point
4.3 Fixed-Bias Circuit
4.4 Emitter Bias
4.5 Voltage-Divider Bias
4.6 DC Bias with Voltage Feedback
4.7 Miscellaneous Bias Configurations
4.8 Transistor Switching Networks
4.9 pnp Transistors
4.10 Bias Stabilization
4.11 Summary
Problems
Chapter 5 BJT AC Analysis
5.1 Introduction
5.2 Amplification in the AC Domain
5.3 BJT Transistor Modeling
5.4 The r Transistor Model
5.5 The Hybrid Equivalent Model
5.6 Hybrid π Model
5.7 Variations of Transistor Parameters
5.8 Common-Emitter Fixed'Bias Configuration
……
Electronic devices and circuit theory
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