Electronic devices and circuit theory

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作   者:(美)Robert L. Boylestad, (美)Louis Nashelsky著;李立华改编

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ISBN:9787121043963

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简介

Chapter 1 Semiconductor Diodes  1.1 Introduction  1.2 Semiconductor Materials: Ge, Si, and GaAs  1.3 Covalent Bonding and Intrinsic Materials  1.4 Extrinsic Materials: n-Type and p-Type Materials  1.5 Semiconductor Diode  1.6 Ideal Versus Practical  1.7 Resistance Levels  1.8 Diode Equivalent Circuits  1.9 Transition and Diffusion Capacitance  1.10 Reverse Recovery Time  1.11 Diode Specification Sheets  1.12 Semiconductor Diode Notation  1.13 Zener Diodes  1.14 Summary  1.15 Computer Analysis Problems Chapter 2 Diode Applications  2.1 Introduction  2.2 Load-Line Analysis  2.3 Equivalent Model Analysis  2.4 AND/OR Gates  2.5 Sinusoidal Inputs; Half-Wave Rectification  2.6 Fu]l-Wave Rectification  2.7 Clippers  2.8 Clampers  2.9 Zener Diodes  2.10 Summary Problems Chapter 3 Bipolar Junction Transistors  3.] Introduction  3.2 Transistor Construction  3.3 Transistor Operation  3.4 Common-Base Configuration  3.5 Transistor Amplifying Action  3.6 Common-Emitter Configuration  3.7 Common-Collector Configuration  3.8 Limits of Operation  3.9 Transistor Specification Sheet  3.10 Transistor Casing and Terminal Identification  3.11 Summary  Problems Chapter4 DC BiasingmBJTs  4.1 Introduction  4.2 Operating Poim  4.3 Fixed-Bias Circuit 4.4 Emitter Bias  4.5 Voltage-Divider Bias  4.6 DC Bias with Voltage Feedback  4.7 Miscellaneous Bias Configurations  4.8 Transistor Switching Networks  4.9 pnp Transistors  4.10 Bias Stabilization  4.11 Summary  Problems Chapter 5 BJT AC Analysis 5.1 Introduction 5.2 Amplification in the AC Domain 5.3 BJT Transistor Modeling 5.4 The re Transistor Model  5.5 The Hybrid Equivalent Model  5.6 Hybrid ,r Model  5.7 Variations of Transistor Parameters  5.8 Common-Emitter Fixed-Bias Configuration ……  Chapter 6 Field-Effect Transistors Chapter 7 FET Biasing Chapter 8 FET Amplifiers Chapter 9 BJT and JFET Frequency Response Chapter 10 Operational Amplifiers Chapter 11 Op-Amp Applications Chapter 12 Power Amplifiers Chapter 13 Feedback Circuits

目录

  Chapter 1 Semiconductor Diodes
   1.1 Introduction
   1.2 Semiconductor Materials: Ge, Si, and GaAs
   1.3 Covalent Bonding and Intrinsic Materials
   1.4 Extrinsic Materials: n-Type andp-Type Materials
   1.5 Semiconductor Diode
   1.6 Ideal Versus Practical
   1.7 Resistance Levels
   1.8 Diode Equivalent Circuits
   1.9 Transition and Diffusion Capacitance
   1.10 Reverse Recovery Time
   1.11 Diode Specification Sheets
   1.12 Semiconductor Diode Notation
   1.13 Zener Diodes
   1.14 Summary
   1.15 Computer Analysis
   Problems
  Chapter 2 Diode Aoolications
   2.1 Introduction
   2.2 Load-Line Analysis
   2.3 Equivalent Model Analysis
   2.4 AND/OR Gates
   2.5 Sinusoidal Inputs: Half-Wave Rectification
   2.6 Full-Wave Rectification
   2.7 Clippers
   2.8 Clampers
   2.9 Zener Diodes
   2.10 Summary
   Problems
  Chapter 3 Bipolar Junction Transistors
   3.1 Introduction
   3.2 Transistor Construction
   3.3 Transistor Operation
   3.4 Common-Base Configuration
   3.5 Transistor Amplifying Action
   3.6 Common-Emitter Configuration
   3.7 Common-Collector Configuration
   3.8 Limits of Operation
   3.9 Transistor Specification Sheet
   3.10 Transistor Casing and Terminal Identification
   3.11 Summary
   Problems
  Chapter 4 DC Biasing-BJTs
   4.1 Introduction
   4.2 Operating Point
   4.3 Fixed-Bias Circuit
   4.4 Emitter Bias
   4.5 Voltage-Divider Bias
   4.6 DC Bias with Voltage Feedback
   4.7 Miscellaneous Bias Configurations
  
   4.8 Transistor Switching Networks
   4.9 pnp Transistors
   4.10 Bias Stabilization
   4.11 Summary
   Problems
  Chapter 5 BJT AC Analysis
   5.1 Introduction
   5.2 Amplification in the AC Domain
   5.3 BJT Transistor Modeling
   5.4 The r Transistor Model
   5.5 The Hybrid Equivalent Model
   5.6 Hybrid π Model
   5.7 Variations of Transistor Parameters
   5.8 Common-Emitter Fixed'Bias Configuration
  ……

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