RF Circuit Design Theory and Applications

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作   者:()Reinhold Ludwig Ludwig,()Pavel Bretchko著

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ISBN:9787030101358

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简介

   本书为国外高校电子信息类优秀教材(英文影印版)之一。    本书在重点介绍射频电路设计理论的同时介绍其设计方法。主要内容有发射线路、Smith图、单点和多点网络、射频过滤设计、有源射频元件及模式、匹配和偏压网络、射频晶体管放大器设计以及振荡器和混频器等。    本书适用于高等院校通信、电子工程及相关专业的本科生,也可供一般工程技术人员参考。   

目录

preface

chapter 1. introduction

1.1 importance of radio frequency design

1.2 dimensions and units

1.3 frequency spectrum

1.4 rf behavior of passive components

1.4.1 high-frequency resistors

1.4.2 high-frequency capacitors

1.4.3 high-frequency inductors

1.5 chip components and circuit board considerations

1.5.1 chip resistors

1.5.2 chip capacitors

1.5.3 surface-mounted inductors

1.6 summary

chapter 2. transmission line analysis

2.1 why transmission line theory?

2.2 examples of transmission lines

2.2.1 two-wire lines

2.2.2 coaxial line

2.2.3 micro strip lines

.2.3 equivalent circuit representation

2.4 theoretical foundation

2.4.l basic laws

2.5 circuit parameters for a parallel plate transmission line

2.6 summary of different line configurations

2.7 general transmission line equation

2.7.l kirchhoff voltage and current law representations

2.7.2 traveling voltage and current waves

2.7.3 general impedance definition

2.7.4 lossless transmission line model

2.8 microstrip transmission lines

2.9 terminated lossless transmission line

2.9.1 voltage reflection coefficient

2.9.2 propagation constant and phase velocity

2.9.3 standing waves

2.10 special termination conditions

2.10.1 input impedance of terminated lossless line

2.10.2 short circuit transmission line

2.10.3 open-circuit transmission line

2.10.4 quarter-wave transmission line

2.11 sourced and loaded transmission line

2.11.1 phasor representation of source

2.11.2 power considerations for a transmission line

2.11.3 input impedance matching

2.11.4 return loss and insertion loss

2.12 summary

chapter 3. the smith chart

3.1 from reflection coefficient to load impedance

3.1.l reflection coefficient in phasor form

3.1.2 normalized impedance equation

3.1.3 parametric reflection coefficient equation

3.1.4 graphical representation

3.2 impedance transformation

3.2.1 impedance transformation for general load

3.2.2 standing we ratio

3.2.3 special transform hon conditions

3.2.4 computer simulations

3.3 admittance transformation

3.3.1 parenthetic admittance equation

3.3.2 additional graphical displays
3.4 parallel and series connections

3.4.1 parallel connection of r and l elements

3.4.2 parallel connection of r and c elements

3.4.3 series connection of r and l elements

3.4.4 series connection of r and c elements

3.4.5 example of a t-network

3.5 summary

chapter 4. single- and multiport networks

4.1 basic definitions

4.2 interconnecting networks

4.2.1 series connection of networks

4.2.2 parallel connection of networks

4.2.3 cascading networks

4.2.4 summary of abcd network representations

4.3 network properties and applications

4.3.1 interrelations between parameter sets

4.3.2 analysis of microwave amplifier

4.4 scattering parameters

4.4.1 definition of scattering parameters

4.4.2 meaning of s-parameters

4.4.3 chain scattering matrix

4.4.4 conversion between z and s-parameters

4.4.5 signal flow chart modeling

4.4.6 generalization of s-parameters

4.4.7 piratical measurements of s-parameters

4.5 summary

chapter 5. an overview of rf filter design

5.1 basic resonator and filter configurations

5.1.1 filter types and parameters

5.1.2 low-pass filter

5.1.3 high-pass filter

5.1.4 bandpass and bandstop filters

5.1.5 insertion loss

5.2 special filter realizations

5.2.1 butter worth-type filters

5.2.2 chebyshev-type filters

5.2.3 renormalization of standard low-pass design

5.3 filter implementation

5.3.1 unit elements

5.3.2 kuroda's identities

5.3.3 examples of microstrip filter design

5.4 coupled filter

5.4.1 odd and even mode excitation

5.4.2 bandpass filter section

5.4.3 cascading bandpass filter elements

5.4.4 design example

5.5 summary

chapter 6. active rf components

6.1 semiconductor basics

6.1.1 physical properties of semiconductors

6.1.2 pn-junchon

6.1.3 schottky contact

6.2 rf diodes

6.2.1 schottk diode

6.2.2 pin diode

6.2.3 varactor diode

6.2.4 impatt diode

6.2.5 tunnel diode

6.2.6 trapatt baritt, and gunn diodes

6.3 bipolar-junction transistor

6.3.1 construction

6.3.2 functionality

6.3.3 frequency response

6.3.4 temperature behavior

6.3.5 limiting values

6.4 rf field effect transistors

6.4.1 construction

6.4.2 functionality

6.4.3 frequency response

6.4.4 limiting values

6.5 high electron mobility transistors

6.5.1 construction

6.5.2 functionality

6.5.3 frequency response

6.6 summary

chapter 7. active rf component modeling

7.1 diode models

7.1.1 nonlinear diode model

7.1.2 linear diode model

7.2 transistor models

7.2.1 large-signal bjt models

7.2.2 small-signal bjt models

7.2.3 large-signal fet models

7.2.4 small-signal fet models

7.3 measurement of active devices

7.3.l dc characterization of bipolar transistor

7.3.2 measurements of ac parameters of bipolar transistor

7.3.3 measurements of field effect 1yansistor parameter

7.4 scattering parameters device characterization

7.5 summary

chapter 8. matching and biasing networks

8.l impedance matching using discrete components

8.l.l two-component matching networks

8.1.2 forbidden regions, frequency response, and quality factor

8.1.3 t and pi matching networks

8.2 microstrip line matching networks

8.2.l from discrete components to microstrip lines

8.2.2 single-stub matching networks

8.2.3 double-stub matching networks

8.3 amplifier classes of operation and biasing networks

8.3.l classes of operation and efficiency of amplifiers

8.3.2 bipolar transistor biasing networks

8.3.3 field effect transistor biasing networks

8.4 summary

chapter 9. rf transistor amplifier designs

9.l characteristics of amplifiers

9.2 amplifier power relations

9.2.l rf source

9.2.2 transducer power gain

9.2.3 additional power relations

9.3 stability considerations

9.3.l stability circles

9.3.2 unconditional stability

9.3.3 stabilization methods

9.4 constant gain

9.4.1 unilateral design

9.4.2 unilateral figure of merit

9.4.3 bilateral design

9.4.4 operating and available power gain circles

9.5 noise figure circles

9.6 constant vswr circles

9.7 broadband, high-power, and multistage amplifiers

9.7.1 broadband amplifiers

9.7.2 high-power amplifiers

9.7.3 multistage amplifiers

9.8 summary

chapter 10. oscillators and misers

10.1 basic oscillator model

10.1.1 negative resistance oscillator

10.1.2 feedback oscillator design

10.1.3 design steps

10.1.4 quartz oscillators

10.2 high-frequency oscillator configuration

10.2.1 fixed-frequency oscillators

10.2.2 dielectric resonator oscillators

10.2.3 yig-tuned oscillator

10.2.4 voltage-controlled oscillator

10.2.5 gunn element oscillator

10.3 basic characteristics of mixers

10.3.1 basic concepts

10.3.2 frequency domain considering

10.3.3 single-ended mixer design

10.3.4 single-balanced mixer

10.3.5 double-balanced mixer

10.4 summary

appendix a. useful physical quantities and units

appendix b. skin equation for a cylindrical conductor

appendix c. complex numbers

c.1 basic definition

c.2 magnitude computations

c.3 circle equation

appendix d. matrix conversions

appendix e. physical parameters of semiconductors

appendix e long and short diode models

f.1 long diode

f.2 short diode

appendix g. couplers

g.1 wilkinson divider

g.2 branch line coupler

g.3 lange coupler

appendix h. noise analysis

h.1 basic definitions

h.2 noisy two-port networks

h.3 noise figure for the port network

h.4 noise figure for cascaded multiport network

appendix i. introduction to matlab

i.1 background

i.2 brief example of stability evaluation

i.3 simulation software on compact disk

i.3.1 overview

i.3.2 software installation

i.3.3 file organization

index


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